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DSA00153409.pdf
by Cree
Partial File Text
CGH40120P 120 W, RF Power GaN HEMT Cree's CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general pu
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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