This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
CGHV1J025D
25 W, 18.0 GHz, GaN HEMT Die
Cree's CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate lengt
