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TOSHIBA í D I S C R E T E / O P T O }
~SÍ
00G7427
5
909725 0
T OS HI BA
(DISCRETE/ OPT O)
5òC
Ql h 21
0 'f-3/-'Î-3
SILICON NPN EPITAXIA L TYPE (PCT PROCESS)
Unit- in m
