DSA00153846.pdf by Cree

Partial File Text PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree's CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency,
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSA00153846.pdf preview Download Datasheet