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    DSA00253073.pdf by TriQuint Semiconductor

    • 0.5-µm HFET 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE
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