DSAUD0066217.pdf by Eudyna Devices

Partial File Text FLX257XV GaAs FET & HEMT Chips FEATURES High Output Power: P1dB = 33.5dBm(Typ.) High Gain: G1dB = 7.5dB(Typ.) High PAE: add = 31%(Typ.) Proven Reliability 95 Drain Drain Drain 40
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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FLX257XV GaAs FET HEMT Chips