DSA00331809.pdf by Microsemi

Partial File Text LX5512E ® TM InGaP HBT 2.4 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Ve
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Obsolete
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LX5512E-LQ

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bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter LX5512E LX5512ELQ LX5512ELQ-TR

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