DSA00743521.pdf by Toshiba
- TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P1dB = 33.5 dBm at f = 8 GHz · High gain - G1dB = 5.5 dB at f = 8 GHz · Suitable for C-Band amplifier · Ion implan
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