DSA00370744.pdf by IXYS

Partial File Text Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTF200N10T VDSS ID25 RDS(on) (Electrically Isolated Back Surface) = 100 V = 103 A 6
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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