DSA00371056.pdf by IXYS

Partial File Text Advance Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTF200N10T VDSS ID25 RDS(on) (Electrically Isolated Back Surface) = 100 V = 120 A 6.
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSA00371056.pdf preview Download Datasheet