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DSAASSA00010942.pdf
by International Rectifier
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IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V IC = 8.0A, TC = 100°C tsc > 3s, Tjmax = 150°C VCE(on) typ. = 1.60V @ IC = 12A G G C E C E Ap
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transistor IC 12A 400v