DSA00501064.pdf by Toshiba

Partial File Text 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Low reverse current: IR = 5µA (Max.) Maximum Ratings (Ta = 25°C)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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