This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
NPN EPITAXIAL
KS E800/801/803
SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
⢠Complement to