DSAEDA000123596.pdf by IXYS

Partial File Text Advance Technical Information High Voltage, High Gain BIMOSFETTM VCES = 2500V IC110 = 2A VCE(sat) â¤ 3.50V IXBH2N250 IXBT2N250 Monolithic Bipolar MOS Transistor TO-247 (IXBH) S
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