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    DSAEDA000123597.pdf by IXYS

    • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE(sat) ≤ 3.3V IXBX25N250 Symbol Test Conditions Maximum Ratings VCES TC = 25°
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