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    Part Img DSAEDA000123599.pdf by IXYS

    • High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK64N250 IXBX64N250 = 2500V = 64A ≤ 3.0V VCE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditi
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