DSAEDA000123611.pdf by IXYS

Partial File Text High Voltage, High Gain BIMOSFETTM VCES = 3000V IC110 = 34A VCE(sat) â¤ 3.2V IXBF55N300 Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPL
Datasheet Type Original
RoHS Yes
Pb Free Yes
Lifecycle Transferred
Price & Stock Find it at Findchips.com

DSAEDA000123611.pdf preview

Download Datasheet

Price & Stock Powered by