DSA00752793.pdf by Toshiba

Partial File Text GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) L
Datasheet Type Original
RoHS No
Pb Free No
Lifecycle Obsolete
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