DSAUTAZ00292.pdf by Hewlett-Packard

Partial File Text Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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ATF SOT ATF-10136 ATF-21186 ATF-26884 ATF-34143 ATF-44101 ATF10236