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    DSA00759994.pdf by Toshiba

    • GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm · · · · Third-generation IGBT Enhancement mode type High speed: tf =
    • Original
    • No
    • No
    • Obsolete
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    DSA00759994.pdf preview
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