DSA00760301.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1415-2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 14.5GHz to 15.0GHz n HIGH GAIN G1dB=6.0dB at 14.5GHz to 15.0GHz n HERMETICALLY SE
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