DSA00760344.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN G1dB=7.5dB at 9.5GHz to 10.5GHz n HERMETICALLY SEAL
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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