DSA00760344.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM0910-2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 9.5GHz to 10.5GHz n HIGH GAIN G1dB=7.5dB at 9.5GHz to 10.5GHz n HERMETICALLY SEAL
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSA00760344.pdf preview Download Datasheet