DSA00760352.pdf by Toshiba
- MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM8596-2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN G1dB=7.5dB at 8.5GHz to 9.6GHz n HERMETICALLY SEALED
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