DSA00760364.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1112-2 TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.5dBm at 11.7GHz to 12.7GHz n HIGH GAIN G1dB=7.5dB at 11.7GHz to 12.7GHz n HERMETICALLY SE
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