3 3 HARRIS
August 1991
RFP4N100
High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors
Package
T O -2 2 0 A B T O P V IE W
Features
· 4.3A, 1000V · rDS(on) = 3 .5 0 · UIS
Scan
No
Unknown
Obsolete
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.