DSA00760370.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1314-9L TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 13.75GHz to 14.5GHz n HIGH GAIN n HERMETICAL
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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