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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1414-2-252
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz n HIGH GAIN G1dB=6.0 dB at 13.75 GHz to 14.5 GHz n BRO
