DSA00372260.pdf by Infineon Technologies

Partial File Text Advance Information PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930 1990 MHz Description Features The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM an
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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PTF191601 PTF191601E

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