DASF008402.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1d
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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