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    DSA00761200.pdf by Toshiba

    • TC58NVG2S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bit
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