DSA00762049.pdf by Toshiba
- MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-30UL TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERN
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