DSA00763533.pdf by Toshiba

Partial File Text MICROWAVE POWER GaN HEMT MICROWAVE SEMICONDUCTOR TGI0910-50 TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=41.0dBm HIGH GAIN GL=9.0dB at 9.5GHz to 10.5GHz BROAD BAND INTERNALLY MATCH
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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