DSA00763543.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-30L TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 12.7GHz to 13.2GHz HIGH GAIN HERMETICALLY S
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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