DSA00763592.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5867-15UL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-47 dBc at Pout= 31.0dBm Single Carrier Level HIGH POWER P1dB=42.0dBm
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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