DSA00763614.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM6472-30UL TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0 dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB=9.5dB at 6.4GHz to 7.2GHz BROAD BAND INTERNA
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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