This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
IXBX25N250
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 2500V
IC90 = 25A
VCE(sat) 3.3V
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to
