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DSA00766232.pdf
by Toshiba
Partial File Text
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1314-15UL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 30.0dBm Single Carrier Level HIGH POWER P1dB=42.0dBm
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Original
RoHS
Unknown
Pb Free
Unknown
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Unknown
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