DSA00766811.pdf by Toshiba

Partial File Text MICROWAVE POWER GaN HEMT MICROWAVE SEMICONDUCTOR TGI7785-25L TECHNICAL DATA FEATURES HIGH POWER Pout=44.5dBm at Pin=35.0dBm HIGH GAIN GL=12.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATC
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