DSAASSA0004590.pdf by Toshiba

Partial File Text TC58NYM9S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512M BIT (64M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYM9S3E is a single 1.8V 512Mbit (553,648,128bits) NAND Electr
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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