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    DSAUTAZ005500.pdf by Harris Semiconductor

    • S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG20N60B3D is a MOS gated high voltage switching device combining
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    G20N60B G20N60B3D hg*20n60 Hgtg20n60
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