Untitled
Abstract: No abstract text available
Text: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2160N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max enndaten
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T2160N
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T2160N
Abstract: No abstract text available
Text: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor Vorläufige Daten preliminary data T2160N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values ITRMSM 2400 2600 2800 2400 2600 2800 2500 2700 2900
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T2160N
T2160N
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T2160N
Abstract: No abstract text available
Text: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T2160N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values enndaten Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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T2160N
T2160N
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Power Semiconductor Applications Philips Semiconductors
Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management
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Abstract: No abstract text available
Text: 9& ,& 9 $ $%% +L3DN70 ,*%7 0RGXOH 61$ ( 35(/,0,1$5< Doc. No. 5SYA 1557-01 Oct 03 • /RZORVV UXJJHG 637 FKLSVHW • 6PRRWK VZLWFKLQJ 637 FKLSVHW IRU JRRG (0& • ,QGXVWU\ VWDQGDUG SDFNDJH • +LJK SRZHU GHQVLW\ • $O6L& EDVHSODWH IRU KLJK SRZHU
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L3DN70
CH-5600
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Untitled
Abstract: No abstract text available
Text: 9& ,& 9 $ ,*%7 0RGXOH 61$ ( 35(/,0,1$5< Doc. No. 5SYA 1557-00 Sep 03 • /RZORVV UXJJHG 637 FKLSVHW • 6PRRWK VZLWFKLQJ 637 FKLSVHW IRU JRRG (0& • ,QGXVWU\ VWDQGDUG SDFNDJH • +LJK SRZHU GHQVLW\ • $O6L& EDVHSODWH IRU KLJK SRZHU
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CH-5600
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PM50RSA120
Abstract: upc 50-120
Text: MITSUBISHI INTELLIGENT POWER MODULES PM50RSA120 FLAT-BASE TYPE INSULATED PACKAGE A B U R W Q U AB AD 12 3 4 5 6 7 8 9 11 13 15 17 19 10 12 14 16 18 F Z - DIA. 4 TYP. P AG N S M 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO
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PM50RSA120
125oC
PM50RSA120
upc 50-120
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upc 50-120
Abstract: dc ac inverter 1000 watt PM50RSA120 PM50120
Text: PM50RSA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/1200 Volts A B U R W Q U AB AD 12 3 4 5 6 7 8 9 11 13 15 17 19 10 12 14 16 18 F Z - DIA. (4 TYP.)
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PM50RSA120
Amperes/1200
125oC
upc 50-120
dc ac inverter 1000 watt
PM50RSA120
PM50120
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PM50RSA120
Abstract: mitsubishi PM50RSA120
Text: MITSUBISHI INTELLIGENT POWER MODULES PM50RSA120 FLAT-BASE TYPE INSULATED PACKAGE A B U R W Q U AB AD 12 3 4 5 6 7 8 9 11 13 15 17 19 10 12 14 16 18 F Z - DIA. 4 TYP. P AG N S M 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO
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PM50RSA120
125oC
PM50RSA120
mitsubishi PM50RSA120
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Untitled
Abstract: No abstract text available
Text: PM50RSA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/1200 Volts A B U R W Q U AB AD 12 3 4 5 6 7 8 9 11 13 15 17 19 10 12 14 16 18 F Z - DIA. (4 TYP.)
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PM50RSA120
Amperes/1200
125oC
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Untitled
Abstract: No abstract text available
Text: QRD4518001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Diode Isolated Module 180 Amperes/4500 Volts S NUTS (3TYP) A D F F B E C N M 1 2 3 V (4TYP) G (3TYP) R (DEEP) Description: High voltage diodes feature highly
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QRD4518001
Amperes/4500
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zth 347
Abstract: BUZ347
Text: BUZ 347 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 347 50 V 45 A 0.03 Ω TO-218 AA C67078-S3115-A2 Maximum Ratings Parameter Symbol
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O-218
C67078-S3115-A2
zth 347
BUZ347
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SKIIP 603
Abstract: GD172-3DUL capacitor MKP igbt
Text: SKiiP 513 GD172-3DUL V3 Absolute Maximum Ratings Symbol Ts = 25°C unless otherwise specified Conditions Values Unit V System SKiiP 3 VCC1 Operating DC link voltage 1200 Visol DC, t = 1 s, main terminals to heat sink 5600 V It RMS) per AC terminal, Tterminal <115°C
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GD172-3DUL
SKIIP 603
capacitor MKP igbt
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5SND0800M170100
Abstract: No abstract text available
Text: VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SND 0800M170100 Doc. No. 5SYA1589-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0800M170100
5SYA1589-00
CH-5600
5SND0800M170100
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Untitled
Abstract: No abstract text available
Text: QRD4518001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual Diode Isolated Module 180 Amperes/4500 Volts S NUTS (3TYP) A D F F B E C N M 1 2 3 V (4TYP) G (3TYP) R (DEEP) Description: Powerex Dual Diode Modules are
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QRD4518001
Amperes/4500
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5SNE0800M170100
Abstract: 5SNE 0800M170100 0800M170100
Text: VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 Doc. No. 5SYA1590-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power
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0800M170100
5SYA1590-00
660kW)
CH-5600
5SNE0800M170100
5SNE 0800M170100
0800M170100
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 800 A ABB HiPak IGBT Module 5SND 0800M170100 Doc. No. 5SYA1589-01 Apr 14 • Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling
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0800M170100
5SYA1589-01
CH-5600
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power Diode 800V 20A
Abstract: CM50TF-28H
Text: CM50TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/1400 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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CM50TF-28H
Amperes/1400
power Diode 800V 20A
CM50TF-28H
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PM600HSA120
Abstract: 1000 watts ups circuit diagram jc 216 sc
Text: MITSUBISHI INTELLIGENT POWER MODULES PM600HSA120 FLAT-BASE TYPE INSULATED PACKAGE A 1. 2. 3. 4. 5. B E E F W V1 SR C1 VC FO S E C K 123 45 H N L Y - 4 TYP. D AA - DIA. Z - DIA. H M Q C S X - DIA. P V - DIA. (4 TYP.) T - M8 THD FIGURE A 0.64 MM SQ. PIN (5 TYP.)
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PM600HSA120
125oC
06oC/W
PM600HSA120
1000 watts ups circuit diagram
jc 216 sc
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PM600HSA120
Abstract: 1000 watts ups circuit diagram
Text: PM600HSA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Half Phase IGBT Inverter Output 600 Amperes/1200 Volts A 1. 2. 3. 4. 5. B E E F W V1 SR C1 VC FO S E C K 123 45 H N L Y - (4 TYP.) D AA - DIA.
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PM600HSA120
Amperes/1200
125oC
PM600HSA120
1000 watts ups circuit diagram
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PM600HSA120
Abstract: 1000 watts ups circuit diagram UPS circuit diagram jc 216 sc vc 150 inverter
Text: MITSUBISHI INTELLIGENT POWER MODULES PM600HSA120 FLAT-BASE TYPE INSULATED PACKAGE A 1. 2. 3. 4. 5. B E E F W V1 SR C1 VC FO S E C K 123 45 H N L Y - 4 TYP. D AA - DIA. Z - DIA. H M Q C S X - DIA. P V - DIA. (4 TYP.) T - M8 THD FIGURE A 0.64 MM SQ. PIN (5 TYP.)
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PM600HSA120
Mi15V
125oC
06oC/W
PM600HSA120
1000 watts ups circuit diagram
UPS circuit diagram
jc 216 sc
vc 150 inverter
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PM600HSA120
Abstract: 1000 watts ups circuit diagram
Text: PM600HSA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Half Phase IGBT Inverter Output 600 Amperes/1200 Volts A 1. 2. 3. 4. 5. B E E F W V1 SR C1 VC FO S E C K 123 45 H N L Y - (4 TYP.) D AA - DIA.
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PM600HSA120
Amperes/1200
125oC
PM600HSA120
1000 watts ups circuit diagram
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Gleichrichterdiode Rectifier Diode D3501N Key Parameters enndaten VRRM 4200 V IFAVM 3470 A TC=100 °C IFSM VT0 63000 A 3570A (TC=55°C) 0,734 V rT 0,134 mΩ RthJC 8,5 K/kW Clamping Force 36 … 52 kN Max. Diameter
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D3501N
50/60Hz
50/60Hz
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bta 8 600
Abstract: BTB10 BTB 60 700 BW
Text: SCS-THOMSON BTA10 BW/CW BTB10 BW/CW SNUBBERLESS TRIACS FEATURES • HIGH COMMUTATION : dl/dt c > 9A/ms without snubber ■ HIGH SURGE CURRENT : lTSM = 100A ■ V drm UP TO 800V ■ BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION
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BTA10
BTB10
E81734)
BTA/BTB10
bta 8 600
BTB 60 700 BW
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