zener diodes 1N serie
Abstract: 957b IN981B bzx96 IN4370 1N4371 bzx 96 ZENER bzx 46 c 20 969B ZENER bzx 46 c
Text: zener diodes diodes zener Types v z t / iz t * nom V THOMSON-CSF 'ZT/IZT* >ZT max Ci) Im AI rZK / IZK max (0) (mA) 400 m W / Tam b = 50°C Tj m ax = 175°C 1N 4370 1N4371 1N 4372 1N 746 1N 747 1N 748 1N 749 1N 750 1N 751 1N 752 1N 753 1N 754 1N 755 1N 756
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1N4371
zener diodes 1N serie
957b
IN981B
bzx96
IN4370
bzx 96
ZENER bzx 46 c 20
969B
ZENER bzx 46 c
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X band attenuator
Abstract: TS7514 of DTMF Proximity Detector trisil tpa PLCC28 TS7514CFN TS7514CP
Text: ZT# s g s -t h o m s o n TS7514 PROGRAMMABLE V.23 MODEM WITH DTMF • PROGRAMMABLE MODES : - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection - Auxiliary analog transmit input - Analog test loopback
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TS7514
75bps
1200bps
579MHz)
TS7514
TS7514.
DDb31b2
X band attenuator
of DTMF Proximity Detector
trisil tpa
PLCC28
TS7514CFN
TS7514CP
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transistor NEC D 882 p
Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain
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2SC5011
2SC5011-T1
transistor NEC D 882 p
393AN
transistor 2sc 3203
nec d 1590
2sc 1329
transistor NEC b 882
nec a 634
e50p
NEC D 822 P
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2C5095
Abstract: 2C5097 2C5092 2C5098 2C5099 vbe 10v, vce 500v NPN Transistor
Text: bDE b a s t n i ooooRbo m i m p p c D •■ NPN High Vbltage ■ Low Power Transistor Chip£[ 2C5092 2C5097 2C5095 2C5098 2C5099 T ZT-ON CHIP TYPE: AA FEATURES • Tri[ l>> D rf is h i ! PUnar D'-si ,n • Brtv> E m itti'r M i’trill^ ritio n A lum inum
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2C5092
2C5097
2C5095
2C5098
2C5099
2C5099
vbe 10v, vce 500v NPN Transistor
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ENB461
Abstract: ENB401D-10A ENB401 ENB461D-10A ENB151D-10A KNB201D-10A enb151
Text: O'E Z'S oosz S'9 SSI St 9S SL ~ 19 89 y o i ao89flîv3 S'Z 8 t OSLZ S'S Oll SS St 29 -OS 9S aoi-ao9saxH Z'Z S 't ooos SZI S8 06 OS 8S SS -Zf zt ao i-aoztexH O'Z t 't ooss 1 i 08 sz IS st ~ ss 6S H0I-<I06SHNH O t- Ot- SI S '9I •5^02x8 S 't SO '0 oos f «” '02 X 8)
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50/60Hz
EXB850D-10A
20/is
EXB121D-10A
H-101
ENB461
ENB401D-10A
ENB401
ENB461D-10A
ENB151D-10A
KNB201D-10A
enb151
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1SMA4736
Abstract: 1SMA4737 1SMA4757 737B
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts SMA/DO-214AC Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package • Built-in strain relief
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1SMA4736
1SMA4757
SMA/DO-214AC
2002/95/EC
DO-2MA4736
1SMA4737
1SMA4757
737B
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1SMA4736
Abstract: 1SMA4737 1SMA4738 1SMA4739 1SMA4757 1SMA4746 ta 861 743b diode 743B
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
DO-214AC
MIL-STD-750,
1SMA4737
1SMA4738
1SMA4739
1SMA4757
1SMA4746
ta 861
743b diode
743B
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Untitled
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 1.0 W Device Marking Code Nominal Zen. Vltg. @ IZT Test Current VZT V 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 Part No. SMAJ4736A
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SMAJ4736A
SMAJ4737A
SMAJ4738A
SMAJ4739A
SMAJ4740A
SMAJ4741A
SMAJ4742A
SMAJ4743A
SMAJ4744A
SMAJ4745A
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Untitled
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
DO-214AC
MIL-STD-750,
SMA4757
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IN4370A
Abstract: IN751a in749a IN4370 IN759A IN4372 IN751 in748a Zener Diode 12v 400mW 1N4372
Text: s t c d | THOMSON 7 ^ 2 3 7 a o a a T r .tt-o * ! Q THOMSON-CSF DIVISION SEMICONDUCTEURS - IN 4370 A — 1N 4372 A IN 746 A — 1N 759 A • ^ 59C 0 2 4 1 3 ZENER DIODES DIODES ZENER D Ptot = 4 0 0 mW 2 ^ V < V z T n o n i< 1 2 V 400 m W hermetically sealed glass silicon Zener
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QGQ5413
1N4372
400mW
pui20
DO-35
CB-1021
IN4370A
IN751a
in749a
IN4370
IN759A
IN4372
IN751
in748a
Zener Diode 12v 400mW
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748b DIODE
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
DO-214AC
MIL-STD-750,
Packagi1SMA4736
748b DIODE
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pan 21
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
DO-214AC
MIL-STD-750,
RB500V-40
pan 21
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Untitled
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
DO-214AC
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
DO-214AC
MIL-STD-750,
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do-214ac diode pd mark
Abstract: MARK 39 DO-214AC
Text: 1SMA4736-AU~1SMA4757-AU SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1 Watts FEATURES 0.114 2.90 0.098(2.50) • For surface mounted applications in order to optimize board space • Built-in strain relief 0.062(1.60) 0.047(1.20) • Glass passivated junction
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1SMA4736-AU
1SMA4757-AU
TS16949
AECQ101
2002/95/EC
IEC61249
2012-REV
do-214ac diode pd mark
MARK 39 DO-214AC
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Untitled
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1.0 Watts FEATURES • For surface mounted applications in order to optimize board space. • Low profile package • Built-in strain relief .047 1.20 • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
IEC61249
DO-214AC
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1 Watts FEATURES 0.114 2.90 0.098(2.50) • For surface mounted applications in order to optimize board space • Built-in strain relief 0.062(1.60) 0.047(1.20) • Glass passivated junction
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1SMA4736
1SMA4757
2011/65/EU
IEC61249
DO-214AC
2012-REV
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Untitled
Abstract: No abstract text available
Text: 1SMA4736-AU~1SMA4757-AU SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1 Watts FEATURES 0.114 2.90 0.098(2.50) • For surface mounted applications in order to optimize board space • Built-in strain relief 0.062(1.60) 0.047(1.20) • Glass passivated junction
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1SMA4736-AU
1SMA4757-AU
TS16949
AEC-Q101
2011/65/EU
IEC61249
2012-REV
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G547
Abstract: A-LFT-1448 SAE-16 A-LFT-1208 6RZ10 PAF16P10SY2 S20 K25 tube az1 KM10 SKB 12/08
Text: ST Tank-Mounted Suction Filter 20 gpm 75 L/min OPTIONAL DIRT ALARM OR ELECTRIC SWITCH 4.06 MAX. 103 OUT OUT .12 (3) THICK GASKET 1.88 (48) 6.25 MAX. (159) 45° TYP .44 (11) Ø ON A 6.25 (159) Ø B.C. (4) MOUNTING HOLES 6.38 PORT TO PORT (162) 1K = 8.81 (224)
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ST1K10SY.
G547
A-LFT-1448
SAE-16
A-LFT-1208
6RZ10
PAF16P10SY2
S20 K25
tube az1
KM10
SKB 12/08
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Untitled
Abstract: No abstract text available
Text: 1SMA4736~1SMA4757 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 6.8 to 51 Volts POWER 1 Watts FEATURES 0.114 2.90 0.098(2.50) • For surface mounted applications in order to optimize board space • Built-in strain relief 0.062(1.60) 0.047(1.20) • Glass passivated junction
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1SMA4736
1SMA4757
2002/95/EC
IEC61249
DO-214AC
2012-REV
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137 742a
Abstract: 1SMA200Z 1SMA4737 1SMA4738 1SMA4739 zener diode marking 182 743A zener 751a zener diode SM ZENER SINGLE COLOR CODE
Text: 1SMA4737 - 1SMA200Z SEMICONDUCTOR [SB TAIWAN Pb 1.0 Watts Surface Mount Silicon Zener Diode SM A/DO-214AC RoHS COMPLIANCE .062 1.58 .060(1.27) E[ Features -$• -Y - ■0- ^ -$■ UL Recognized File # E -32 62 43 Qualified as per A E C -Q 1 01 For surface mounted applications in order to
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1SMA4737
1SMA200Z
/DO-214AC
E-326243
AEC-Q101
1SMA200Z)
137 742a
1SMA4738
1SMA4739
zener diode marking 182
743A
zener 751a
zener diode SM
ZENER SINGLE COLOR CODE
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS ZD 3.0mmL Chip Type series Chip type with 3.0mmL height. Designed for surface mounting on high density PC board. Applicable to automatic mounting machine fed with carrier tape. Compliant to the RoHS directive 2011/65/EU .
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2011/65/EU)
120Hz,
100kHz
10kHz
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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ID102510
Abstract: ARM926EJ-S
Text: ARM Compiler toolchain Version 4.1 Creating Static Software Libraries with armar Copyright 2010 ARM. All rights reserved. ARM DUI 0476B ID102510 ARM Compiler toolchain Creating Static Software Libraries with armar Copyright © 2010 ARM. All rights reserved.
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0476B
ID102510)
ID102510
ID102510
ARM926EJ-S
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