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    EP9132

    Abstract: EP9134 EP9142 EP9144 EE-19 N EP9131 EP9145 EP9146 EP9147 EP9160
    Text: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0


    OCR Scan     		EP9130 EP9160 EP9145 EP9175 EP9131 EP9161 EP9146 EP9176 EP9132 EP9162 EP9134 EP9142 EP9144 EE-19 N EP9147 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0


    OCR Scan     		EP9130 EP9131 EP9132 EP9133 EP9134 EP9135 EP9136 EP9137 EP9138 EP9139 PDF

    EP9142

    Abstract: EP9144 EP9132 EP9134 EP9131 EP9140 EP9141 EP9150
    Text: SMD 28 Pin Passive Delay Lines Zo OHMS ±10% DELAY NS±5% or ±2NS TAP DELAYS NS RISE TIME NS MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.0±0.5 3.5+0.5 4.0±0.5 4.5±0.5 5.0±1.0


    OCR Scan     		EP9130 EP9131 EP9132 EP9133 EP9134 EP9135 EP9136 EP9137 EP9138 EP9139 EP9142 EP9144 EP9140 EP9141 EP9150 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD 28 Pin Gull-Wing Passive Delay Lines Zo Ohms ± 10% Delay nS ± 5% or ± 2 nS Tap Delays nS 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 2.5 8 10 12 20 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 -


    Original     		EPA3252-2 EPA3252-8 EPA3252-10 EPA3252-12 EPA3252-XXX DSA3252-XXX PDF

    EP9167

    Abstract: SMD28
    Text: SMD 28 Pin Gull-Wing Passive Delay Lines Zo OHMS ±10% DELAY NS ±5% or ±2 NS TAP DELAYS NS RISE TIME NS MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5+0.5 3.0±0.5 3.5±0.5 4.0+0.5


    OCR Scan     		EP9160 EP9161 EP9162 EP9163 EP9164 EP9165 -370MAX. 450MAX EP9167 SMD28 PDF

    EP9140

    Abstract: No abstract text available
    Text: SMD 28 Pin Passive Delay Lines Zo Ohm s ±10% Delay Tap nS ± 5% Delays or 12 n S t nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5+0.5 3.0+0.5 3.5±0.5 4.0±0.5 4.5±0.5 5.0±1.0 6.0±1.0


    OCR Scan     		EP9130 EP9131 EP9132 EP9133 EP9134 EP9135 EP9136 EP9137 EP9138 EP9139 EP9140 PDF

    Untitled

    Abstract: No abstract text available
    Text: LH28F400SU B-ZO FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V Vpp; 3.3 V Vqq - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability - 160 ns Maximum Access Time


    OCR Scan     		LH28F400SU 49-PIN J63428 T96108 PDF

    EP9132

    Abstract: EP9144 EP9134 EP9142 EP9131 EE-19 N EP9161 EP9133 EP9135 EP9136
    Text: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays ± 10% or ±2 nS† nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 Rise Atten. Time DB% nS Max. Max. 2.5±0.5 3.0±0.5 3.5±0.5


    Original     		EP9130 EP9131 EP9132 EP9133 EP9134 EP9135 EP9136 EP9137 EP9138 EP9139 EP9132 EP9144 EP9134 EP9142 EP9131 EE-19 N EP9161 EP9133 EP9135 EP9136 PDF

    ZO 109

    Abstract: zo 107 2SC5247 Hitachi DSA0014
    Text: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original     		2SC5247 ZO 109 zo 107 2SC5247 Hitachi DSA0014 PDF

    ZO 109

    Abstract: zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398
    Text: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter


    Original     		2SC5247 ADE-208-281 ZO 109 zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398 PDF

    HITEC 527

    Abstract: ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635
    Text: 2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK–4 2


    Original     		2SC4994 ADE-208-012 HITEC 527 ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635 PDF

    zo 103 ma

    Abstract: 2SC5247 transistor ECG 332 DSA003641
    Text: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz


    Original     		2SC5247 ADE-208-281 zo 103 ma 2SC5247 transistor ECG 332 DSA003641 PDF

    transistor 2sc 973

    Abstract: TRANSISTOR 2SC 733
    Text: HITACHI 2SC5247-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-j- = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 9 0 0 MHz 1. Emitter


    OCR Scan     		2SC5247------Silicon 2SC5247 transistor 2sc 973 TRANSISTOR 2SC 733 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5247 Silicon NPN Epitaxial HITACHI Application V H F / U H F wide band am plifier Features • H igh gain bandwidth product fT = 13.5 G H z typ • High gain, low noise figure PG = 17 dB typ, N F = 1.2 dB typ at f = 900 M H z Outline SM PAK 1. Emitter 2. Base


    OCR Scan     		2SC5247 ADE-208-281 rec08 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5078 S ilicon N P N Epitaxial HITACHI ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4


    OCR Scan     		2SC5078 ADE-208-221 PDF

    Hitachi DSA002750

    Abstract: No abstract text available
    Text: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.


    Original     		2SK2685 D-85622 Hitachi DSA002750 PDF

    2SK2685

    Abstract: Hitachi DSA002750 ADE80
    Text: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. VDS = 6 or more voltage.


    Original     		2SK2685 D-85622 2SK2685 Hitachi DSA002750 ADE80 PDF

    175MHZ

    Abstract: 843002AKI-40 ICS843002I-40 STM-16
    Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS843002I-40 175MHZ, FEMTOCLOCKS VCXO BASED SONET/SDH JITTER ATTENUATOR GENERAL DESCRIPTION FEATURES The ICS843002I-40 is a member of the HiperClockS™ family of high performance clock HiPerClockS™ solutions from ICS. The ICS843002I-40 is a PLL


    Original     		ICS843002I-40 175MHZ, ICS843002I-40 843002AKI-40 175MHZ 843002AKI-40 STM-16 PDF

    2SC5812

    Abstract: DSA003640 ADE-208-1468
    Text: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468 Z Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: 2 |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 Note: Marking is “WG–“.


    Original     		2SC5812 ADE-208-1468 D-85622 D-85619 2SC5812 DSA003640 PDF

    2SK2685

    Abstract: DSA003642
    Text: 2SK2685 GaAs HEMT ADE-208-400A Z 2nd. Edition Mar. 2001 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.


    Original     		2SK2685 ADE-208-400A 2SK2685 DSA003642 PDF

    2SC5820

    Abstract: str 1195 IC STR 404
    Text: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator ADE-208-1604A Z Rev.1 Nov. 2002 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz


    Original     		2SC5820 ADE-208-1604A D-85622 D-85619 2SC5820 str 1195 IC STR 404 PDF

    MSA-1104

    Abstract: MSA-1104 amplifier zo 107 MA zo 107
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50␣ Ω or 75␣ Ω Gain Block • 3␣ dB Bandwidth: 50␣ MHz to 1.3␣ GHz • 17.5 dBm Typical P1␣ dB at 0.5␣ GHz • 12␣ dB Typical 50␣ Ω Gain at


    Original     		MSA-1104 MSA-1104 MSA-1104 amplifier zo 107 MA zo 107 PDF

    2SK2685

    Abstract: Hitachi DSA00384
    Text: 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.


    Original     		2SK2685 ADE-208-400 2SK2685 Hitachi DSA00384 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •


    OCR Scan     		2SK2685 PDF