Untitled
Abstract: No abstract text available
Text: DRAWING No,:- M 2 2 -2 1 7 X X X X SHEET 2 OF 2 IF IN DOUBT NOT TO S C A L E THIRD ANGLE "L" = No. OF WAYS x EG:- fh yk zj\ 10 W AYS zj\ PRO JECTIO N A LL DIMENSIONS IN mm 2.00 — x 2,00 = 20,00 / j\ / j\ / j\ zj\ N O TES 1, MOULDING M A T E R IA L P O L Y A M ID E
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OCR Scan
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M22-217XXXX
10miTi
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PDF
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15 BZX
Abstract: BZY 100 bzx c 1v4 bzx c27 bzy 200 85C36 bzx 2v1
Text: Diodes Z diodes BZX 8 5 / . . . ' Type Pv = 1.3 W t/z Fig. Nr. 21 V and 10'4/°C ano 'zj at O >Z mA 'zj a* O >Z mA / R at ma ÜR V 1 BZX 8 5 /C 2 V 7 2.5.2.9 -8 .-5 < 20 80 <400 1 < 150 BZX 8 5 /C 3 V 0 2 .8 .3 2 -8 .-5 < 20 80 <400 1 < 100 1 BZX 8 5 /C 3 V 3
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OCR Scan
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87/0V7
BZY87/1V4
87/2V1
87/2V8
87/3V4
15 BZX
BZY 100
bzx c 1v4
bzx c27
bzy 200
85C36
bzx 2v1
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PDF
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ZJ DIODE
Abstract: marking 222 zener diode Diode Marking z3 DO-35 marking 683 zener diode
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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Original
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RthJA300K/W
1-Nov-2006
DO-35
ZJ DIODE
marking 222 zener diode
Diode Marking z3 DO-35
marking 683 zener diode
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PDF
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Untitled
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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Original
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300K/W
1-Jun-2004
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PDF
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Untitled
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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Original
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300K/W
1-Apr-2006
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PDF
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zener diode z39b
Abstract: No abstract text available
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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Original
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300K/W
1-Jan-2006
zener diode z39b
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PDF
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zener diode z39b
Abstract: ZJ DIODE
Text: ZJ Series Zener diode Features 1. Low leakage 2. High reliability Applications Voltage stabilization Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Power dissipation Test Conditions Type RthJA≦300K/W Junction temperature
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Original
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RthJA300K/W
zener diode z39b
ZJ DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: ZJ Series Axial Lead Zener Diodes SMALL SIGNAL ZENER DIODES 0.5WATTS P b Lead Pb -Free Features: * Low leakage * High reliability Applications: * Voltage stabilization DO-35 Construction: * Silicon epitaxial planar Mechanical Data: * Case : DO-35 Glass Case
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Original
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DO-35
DO-35
05-Jan-07
300K/W
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PDF
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040B
Abstract: No abstract text available
Text: PART NUMBER UNCONTROLLED DOCUMENT 3.50 [0.138] REF. REV. S S S — LX3058GD— 1040B ~ur + 04.00 [00.157] ELECTRO-OPTICAL CHARACTERISTICS Ta = 25’C PARAMETER MIN PEAK WAVELENGTH 03,00 [0,118] 5.25 [0,207] i _ 1,00 [0,039] 2.2 zJ 37,00 [1,457] MIN, 0,50 [0,020]
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OCR Scan
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LX3058GDâ
85REEN
040B
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PDF
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Untitled
Abstract: No abstract text available
Text: N E W Digital Bar Ionizer ZJ-BAS Effective and Efficient Ionization Effective and Efficient Ionization The highest level of ionization in its class. Advanced Features in 3 Aspects Three Technologies Supporting Effective and Efficient Ionization Technology 1
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Original
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ZJ-BAS058
847-843-7900/Fax:
6835-3011/Fax:
21-5037-2222/Fax:
E390-E1-01
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PDF
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ZENER CODE 51b
Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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Original
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16tance
ZENER CODE 51b
47C 36a
10D-9
27C zener
diode Lz 99
diode zener 30c Z
51a zener
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PDF
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MM 74 HC 221 N
Abstract: QP-104 EUCI QP-106
Text: ^roduct Datasheet —Quickie Receptacles Page 1 o f 1 £ FC hon F C Product catalog f Latest News jFCI Basics+ Employment \ IrA ZJ Round Conductor, Flat Cable IDC Connectors * Customer drawing >Product specification >• 77103-016 Mature >Sample request
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OCR Scan
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6B120-064
MM 74 HC 221 N
QP-104
EUCI
QP-106
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PDF
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ionizer
Abstract: ZJ9-BA-CT01 ZJ-BAS130 FC15A ioniser E390-E1-01
Text: N E W Digital Bar Ionizer ZJ-BAS Effective and Efficient Ionization Effective and Efficient Ionization The highest level of ionization in its class. Advanced Features in 3 Aspects Three Technologies Supporting Effective and Efficient Ionization Technology 1
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Original
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ZJ-BAS058
847-843-7900/Fax:
6835-3011/Fax:
21-5037-2222/Fax:
E390-E1-01
ionizer
ZJ9-BA-CT01
ZJ-BAS130
FC15A
ioniser
E390-E1-01
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PDF
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d1507
Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote
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Original
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2SK3479
2SK3479
O-220AB
2SK3479-S
O-262
2SK3479-ZJ
O-263
2SK3479-Z
O-220SMDNote
d1507
2SK3479-S
2SK3479-Z
2SK3479-ZJ
MP-25
MP-25Z
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PDF
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Untitled
Abstract: No abstract text available
Text: Smart Electrostatic Sensor ZJ-SD CSM_ZJ-SD_DS_E_2_1 Smart Static Electricity Sensing: Making Static Electricity Visible • Compact sensor head and smart digital amplifier measure the electrostatic charge quantity of workpieces at all times. • Multi-point measurements and data logging of the static
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ZJ-SD100
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PDF
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D1459
Abstract: 2SK3430 2SK3430-S 2SK3430-Z 2SK3430-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-ZJ TO-263 2SK3430-Z TO-220SMDNote
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Original
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2SK3430
2SK3430
O-220AB
2SK3430-S
O-262
2SK3430-ZJ
O-263
2SK3430-Z
O--220SMDNote
D1459
2SK3430-S
2SK3430-Z
2SK3430-ZJ
MP-25
MP-25Z
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PDF
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ZJ18B
Abstract: ZJ15B ZJ10A ZJ12B ZJ10 ZJ10B ZJ10C ZJ10D ZJ11A ZJ11B
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Max. 0.45 Min. 27.5 Max. 1.9 Features Black Cathode Band • Glass sealed envelope Black Part No. • High reliability XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm
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Original
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DO-34
ZJ18B
ZJ15B
ZJ10A
ZJ12B
ZJ10
ZJ10B
ZJ10C
ZJ10D
ZJ11A
ZJ11B
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PDF
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RSR010N10
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch MOSFET RSR010N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm TSMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3). (3) (1) (2) Abbreviated symbol : ZJ
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Original
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RSR010N10
RSR010N10
Pw10s,
R1120A
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PDF
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D1459
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ DESCRIPTION ORDERING INFORMATION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-ZJ TO-263
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Original
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2SK3430
2SK3430
2SK3430-S
2SK3430-ZJ
2SK3430-Z
O-220AB
O-262
O-263
O--220SMD
D1459
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PDF
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Untitled
Abstract: No abstract text available
Text: slkonJusbm %&*», '' 'V-Zj i f jV/V1 INNOVATORS IN/INTEGRATION c.p „ /^ D-to-A Converter Data Sheet GENERAL DESCRIPTION extreme high resolution, are easily implemented cost effectively. Silicon Systems' new SSI 6280 contains three 4J3itdkjitaHo analog converters, which provide a total color palette of 4096
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OCR Scan
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44444M-
100mV
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PDF
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Untitled
Abstract: No abstract text available
Text: Ionizer Digital Bar Type ZJ-BAS CSM_ZJ-BAS_DS_E_2_1 The highest level of ionization in its class. • Sensing and variable-AC system provides fast and meticulous ionization. • Linked Ionizers cover a wide area without causing uneven ionization. • Digital ion display provides simple and reliable settings.
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Original
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PDF
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marking ML5
Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
Text: PANASONIC INDL/ELEK-CSEfll} 7EC V | ^ 3 5 0 5 4 □GD1GD4 7 | ~ h ^ ^ T / 5 ? _ *_ 2SB970 2SB970 '> ij zj > PNP öl tf £ '> t Ji/Z?I s - j - f î t / S i PNP Epitaxial Planar fSISEEiÜ^jittififfl/AF Output Amplifier
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OCR Scan
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2SB970
f-800MHz
40MHz
800MHz
Re-68011
Ta-25
marking ML5
2SB977
2SB977A
2SC1547
2SD893
PG-25
ML5 marking
2SB970
2SD893A
IS020
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PDF
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ZJ12B
Abstract: ZJ12C ZJ16B ZJ18B ZJ5V6B ZJ15A ZJ-15B diode Lz 66 diode Lz 99 ZJ10
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications min. 27.5 Features • Glass sealed envelope • High reliability max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.5 Glass case JEDEC DO-34 Dimensions in mm
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Original
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DO-34
ZJ12B
ZJ12C
ZJ16B
ZJ18B
ZJ5V6B
ZJ15A
ZJ-15B
diode Lz 66
diode Lz 99
ZJ10
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PDF
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIßTI^OKinei STB55NE06L N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE " POWER MOSFET PRELIM IN ARY DATA TYPE S TB 55N E06L V dss RDS on Id 60 V < 0.022 a 55A . TYPICAL RDs(on) =0.018 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED
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OCR Scan
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STB55NE06L
O-263
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PDF
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