PED relay
Abstract: P.E.D. relay
Text: 42*+2 <>.7585-=>;1 58=1;7105-=1 :9@1; ;16-B 2FCPQNFO V <C lpbm\abg` \ZiZ[bebmr V 87dV bfinel^ pbmalmZg] ohemZ`^ /[^mp^^g \hbe Zg] \hgmZ\ml0 V M^^ml VFG 7=:8 k^bg_hk\^ bglneZmbhg V Jb`aer ^_b\b^gm fZ`g^mb\ \bk\nbm _hk ab`a l^glbmbobmrA 977fW V Gqmk^f^er lfZee _hhmikbgm nmbebsbg` PED Zk^Z
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977fW
SgO93
PED relay
P.E.D. relay
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Untitled
Abstract: No abstract text available
Text: 53+,3|4 =?/8696.>?<2 69>2<8216.>2 ;:A2< <27.C 3GDQROGP W 87C lpbm\abg` \ZiZ[bebmr W 87dV bfinel^ pbmalmZg] ohemZ`^ /[^mp^^g \hbe Zg] \hgmZ\ml0 W M^^ml VFG 7=:8 k^bg_hk\^ bglneZmbhg W Jb`aer ^_b\b^gm fZ`g^mb\ \bk\nbm _hk ab`a l^glbmbobmrA 977fW W Gqmk^f^er lfZee _hhmikbgm nmbebsbg` PED Zk^Z
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977fW
SgO93
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PED relay
Abstract: No abstract text available
Text: 53+,3|4 =?/8696.>?<2 69>2<8216.>2 ;:A2< <27.B 3FCPQNFO V 87C lpbm\abg` \ZiZ[bebmr V 87dV bfinel^ pbmalmZg] ohemZ`^ /[^mp^^g \hbe Zg] \hgmZ\ml0 V M^^ml VFG 7=:8 k^bg_hk\^ bglneZmbhg V Jb`aer ^_b\b^gm fZ`g^mb\ \bk\nbm _hk ab`a l^glbmbobmrA 977fW V Gqmk^f^er lfZee _hhmikbgm nmbebsbg` PED Zk^Z
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977fW
SgO93
PED relay
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91AB
Abstract: A13A 7F6L
Text: 865/ ;9<91AB?5 8978 >=D5? :1A389<7 ?5:1E 6IFTURIS Z =7C lpbm\abg` \ZiZ[bebmr Z LZm\abg` k^eZr Z ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\ml1 Hbe^ Nh5AG8:;?8 Z J^Zor ehZ] ni mh 8<777VC Z Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1 Z Onmebg^ Fbf^glbhglA 0:?57 q :757 q 8=571 ff
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777VC
857WB
SgO93
777OPS
91AB
A13A
7F6L
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91AB
Abstract: A13A
Text: 865/ ;9<91AB?5 8978 >=D5? :1A389<7 ?5:1E 6IFTURIS Z =7C lpbm\abg` \ZiZ[bebmr Z LZm\abg` k^eZr Z ;dV ]b^e^\mkb\ lmk^g`ma 0[^mp^^g \hbe Zg] \hgmZ\ml1 Hbe^ Nh5AG8:;?8 Z J^Zor ehZ] ni mh 8<777VC Z Ggobkhgf^gmZe _kb^g]er ikh]n\m 0RhJS \hfiebZgm1 Z Onmebg^ Fbf^glbhglA 0:?57 q :757 q 8=571 ff
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777VC
Nh5AEQE79778778
857WB
SgO93
777OPS
91AB
A13A
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Untitled
Abstract: No abstract text available
Text: $ $ D$0<40=":A0<!$% "<:/?.>$?88,<C 6LHZ[XLY ) ;J "+*' ' ;J"_^#$]Qh U'CK!* JM:CF#=;<!F9EI9B7M.(+. +( L ) >J 0 +&- ] ) >J 0
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CH96CC?
H9GH98
GH5B79à
577CF8
GH5B79
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bd 9h
Abstract: No abstract text available
Text: $ "%&$!"#D $ 0<40= " : A 0< ! $ % " <: /?.>$ ?8 8 ,<C 6LHZ[XLY ) ;J U * DH=A =N98 :CF 0 8F=J9F5DD@=75H=CB ) CH96CC? 0 " + * ' ' ;J"_^#$]Qh U ' CK !* JM :CF# =;< !F9EI9B7M. ( + . +( L ) >J 0 +&- ]" ) >J 0 ,&+ $; U 5J5@5B7<9 H9GH
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577CF
bd 9h
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Untitled
Abstract: No abstract text available
Text: B@F+->. 475 4WWT=?BC=$;B1='=-:>5>?;= $=;0@/?&@99-=D 7MI[\YMZ . <K U*9KF9JC@IH=CB5FM<=;<JC@H5;9H97<BC@C;M , <K#_^$&]Qh U%BHF=BG=7:5GH F97CJ9FM6C8M8=C89 N < 8 U!LHF9A9@M@CKF9J9FG9F97CJ9FM7<5F;9
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F97CJ9FMà
F5H98
75D56=
577CF8
26892F
009-134-A
O-247
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H5B7
Abstract: No abstract text available
Text: 9?-'@'004? 4VVS=>AB=#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - !/0Z%]Qh U3CF@8K=8969GH+ Tc%_^=B0+ + =K"_^#%]Qh U1@HF5@CK;5H97<5F;9 * W%di` /. N )')22 /) ^< U"LHF9A98J 8HF5H98 U%=;<D95?7IFF9BH75D56=@=HM
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F5H98
75D56=
577CF8
H5B7
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Untitled
Abstract: No abstract text available
Text: 3CB/' ? @Y\R>@Cb ':.99'64;.9 >.;?6?@<> %><1A0@'A:.>E 7NJ\]ZN[ ) ;J U) 8=6CC:A ' ;J"`_#$^Rh U C=6C8:B:CHBD9: U0AHF6'D<>8A:J:A 1F6H:9 *( M ) >J 1 *+ ^ ) >J 1 +* $; +&/ 7 UJ6A6C8=:F6H:9 U!DDHEF>CH8DBE6H>7A:HD.*/
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688DF9
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MAR 703 MOSFET TRANSISTOR
Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
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RD15HVF1
175MHz520MHz
175MHz
520MHz
RD15HVF1
MAR 703 MOSFET TRANSISTOR
RD15HVF1-101
MITSUBISHI RF POWER MOS FET
D 1413 transistor
micro strip line
100OHM
rd15hvf11
rd15hvf
transistor 1346
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RD15HVF1-101
Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF
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RD15HVF1
175MHz520MHz
175MHz
520MHz
RD15HVF1
RD15HVF1-101
D 1413 transistor
D1560
tc 1601 a
rd15hvf
transistor marking zg
TRANSISTOR 2229
transistor D 1557
6015d
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RD15HVF1
Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica
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RD15HVF1
175MHz15W
520MHz
RD15HVF1
175MHz
520MHz
rd15hvf
RD15HV
175mhz
gp 845
100OHM
mitsubishi rf RD15HVF1
UHF POWER mosfet 3w
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Untitled
Abstract: No abstract text available
Text: 9?E-'@'+,4? 4VVS=>Aa#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - !/0Z]Qh U3CF@8K=8969GH+ Tc%_^=B0+ + =K"_^#%]Qh U1@HF5@CK;5H97<5F;9 * W%di` /. N )')-. *.) ^< U"LHF9A98J 8HF5H98 U%=;<D95?7IFF9BH75D56=@=HM
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F5H98
75D56=
577CF8
26892F
009-134-A
O-247
PG-TO247-3
O-247,
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RD15HVF1
Abstract: RD15HVF1-101 100OHM RF Transistor s-parameter vhf transistor D 1557
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica
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RD15HVF1
175MHz520MHz
RD15HVF1
175MHz
520MHz
RD15HVF1-101
100OHM
RF Transistor s-parameter vhf
transistor D 1557
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rd15hvf
Abstract: RF Transistor s-parameter 30W RD15HVF1 transistor d 1302
Text: < Silicon RF Power MOS FET Discrete > RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically DRAWING 1.3+/-0.4 3.2+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power and High Gain:
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RD15HVF1
175MHz520MHz
RD15HVF1
175MHz
520MHz
Oct2011
rd15hvf
RF Transistor s-parameter 30W
transistor d 1302
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rd15hvf
Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
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RD15HVF1
175MHz520MHz
175MHz
520MHz
RD15HVF1
rd15hvf
RD15HVF1-101
RD15HV
rd15h
100OHM
Zo-50o
transistor d1 391
rd15hvf11
zg j9
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h75b
Abstract: 97C-B dxc0 C82t2 ha98 9B 9F
Text: 9?-'@'004? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !/ U 3 CF@ 8K=89 69GH+ Tc%_^ =B 0+ 0 Z%]Qh + =K"_^#%]Qh U1 @ HF5 @ CK ;5H9 7<5F;9 * W%di` /. N )')22 " /) ^< U" LHF9A 9 8J 8HF5H98 U% =;< D95? 7IFF9B H75D56=@ =HM U- I5@ =:=98for industrial grade applications 577CF8=
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H75D56
98for
577CF
h75b
97C-B
dxc0
C82t2
ha98
9B 9F
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FS5B
Abstract: 986M
Text: 9?E-'@'+,4? 4VVS=>Aa # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !/ U 3 CF@ 8K=89 69GH+ Tc%_^ =B 0+ 0 Z]Qh + =K"_^#%]Qh U1 @ HF5 @ CK ;5H9 7<5F;9 * W%di` /. N )')-. " *.) ^< U " LHF9A 9 8J 8HF5H98 U % =;< D95? 7IFF9B H75D56=@ =HM U - I5@
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H75D56=
577CF
009-134-A
O-247
PG-TO247-3
O-247,
FS5B
986M
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zg j9
Abstract: 62b21
Text: 3CB/' ? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J U ) 8=6CC: A ' ;J"`_#$^Rh U C=6C8: B : CHB D9: U 0 AHF6 ' D<> 8 A: J: A 1 F6H: 9 *( M ) >J 1 *+ ^" ) >J 1 +* $; +&/ 7 U J6A6C8=: F6H: 9 U !DDHEF> CH8DB E6H> 7A: H D. * /
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k d998
Abstract: d998 77CF HCB5F D998 data Sj 7ca k d998 p k d998 n
Text: B@F+->. 475 4WWT=?BC= $ ;B 1=' =-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ . <K U * 9K F9JC@ IH=CB5 FM <=;< JC@ H5 ;9 H97<BC@ C;M , <K#_^$&]Qh U %BHF=BG=7 :5 GH F97CJ9FM 6C8M 8=C89 N " 8 < U !LHF9A 9@M @CK F9J9FG9 F97CJ9FM 7<5 F;9 U 1 @HF5 @CK ;5 H9 7<5 F;9
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009-134-A
O-247
PG-TO247-3
O-247,
k d998
d998
77CF
HCB5F
D998 data
Sj 7ca
k d998 p
k d998 n
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u895
Abstract: bh7a
Text: % % # ! c "%&$!"# % <C 2> >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ U 7<5BB9@ @C;=7 @9J9@ U L79@@9BH;5H9 7<5F;9 L(;J"_^# DFC8I7H!* ( ;J )( L ;J"_^#$]Qh -&) ]" )( 7 ; U0 9FM@CK CB F9G=GH 5B79 (;J"_^# U X CD9F5H=B; H9A D9F5H IF9 U + 6 :F99 @958 D@5H=B; - C# . 7CA D@=5BH
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577CF
u895
bh7a
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Untitled
Abstract: No abstract text available
Text: GIM@?N +=L9D-PA<=1=EA;GF<M;LGJ$A=D<#>>=;L2J9FKAKLGJ ! GGD +- 1 # 4!GGD+-1Y#.GO=J2J9FKAKLGJ '.P0# " 9L 9 1 @=L 0=N $AF9D ' F<MK L JA 9D + MD L A E 9JC =L +<<9#% F&<C2> >.;?6?@<>
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zg j9
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67776H 896-941 MHz, 7.2V, 5.0W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM <THh PIN : D Pin (DVCC1 VCC 2 VCC3 ©PO ®GND : : ; : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN
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M67776H
zg j9
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