UJT 2N2646 specification
Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have
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1N6373
1N6381
ICTE-36,
MPTE-45)
UJT 2N2646 specification
GE Transient Voltage Suppression Manual
Triac motor speed control
UJT-2N2646 PIN DIAGRAM DETAILS
marking dp U1 sot363
UJT pin identification
TO-220 MOS
UJT 2N2646
DO41 PACKAGE diode marking S6
sine wave UPS inverter circuit diagram
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-10 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-10
10x160Â
10x1000
10x1000Â
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ICTE-22
Abstract: No abstract text available
Text: Part: ICTE-22 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-22
10x160Â
10x1000
10x1000Â
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10c zener
Abstract: No abstract text available
Text: Part: ICTE-10C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-10C
10x160Â
10x1000
10x1000Â
10c zener
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Abstract: No abstract text available
Text: Part: ICTE-8 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 25.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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10x160Â
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zener diode 12c
Abstract: No abstract text available
Text: Part: ICTE-12C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-12C
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10x1000Â
zener diode 12c
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-8C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 50.00 Maximum Temperature Max Temp (°C ) 0.00
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18c zener diode
Abstract: ZENER 18C 2480 zener
Text: Part: ICTE-18C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-18C
10x160Â
10x1000
10x1000Â
18c zener diode
ZENER 18C
2480 zener
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-5 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 300.00 Maximum Temperature Max Temp (°C ) 0.00
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-18 Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00 Standoff Polarity
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ICTE-18
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Untitled
Abstract: No abstract text available
Text: Part: ICTE-15C Series: ICTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00
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ICTE-15C
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microcontroller based overvoltage and under voltage relays
Abstract: No abstract text available
Text: Agilent Medalist i3070 Series 5 In-Circuit Test System Data Sheet The Agilent Medalist i3070 Series 5 In-Circuit Test ICT system introduces a new infrastructure with 3 new Capabilities: 1) The flexibility to incorporate external circuits to balance between ICT &
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i3070
5990-4344EN
microcontroller based overvoltage and under voltage relays
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agilent i3070 AC power
Abstract: AGILENT i3070 maintenance 5989-6292EN agilent i3070 i3070 5990-4411EN microcontroller based overvoltage and under voltage relays PS6751Quad fr100k zener test ict
Text: Agilent Medalist i3070 Series 5 In-Circuit Test System Data Sheet The Agilent Medalist i3070 Series 5 In-Circuit Test ICT system introduces a new infrastructure with 3 new Capabilities: 1) The flexibility to incorporate external circuits to balance between ICT &
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i3070
5990-4344EN
agilent i3070 AC power
AGILENT i3070 maintenance
5989-6292EN
agilent i3070
5990-4411EN
microcontroller based overvoltage and under voltage relays
PS6751Quad
fr100k
zener test ict
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets
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orient 817b
Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL150/D
May-2001
r14525
DLD601
orient 817b
UJT-2N2646
UJT-2N2646 PIN DIAGRAM DETAILS
L 1011 817B
CI 817b
MDA2500
UJT 2N2646
Zener Diode SOT-23 929b
2N2646 pin diagram
diode 913b
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Gfk 81a
Abstract: LT 543 common cathode Gfp 81a MMBZ15ALT1 MZ4623 SOT23 MOS MARKING KE gfk 47a mzp a 001 96 16 MMBZ20ALT1 1N5994B
Text: TVS/Zeners Transient Voltage Suppressors Zener Regulator and Reference Diodes In Brief . . . Motorola’s standard TVS Transient Voltage Suppressors and Zener diodes comprise the largest inventoried line in the industry. Continuous development of improved manufacturing
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1N5283
1N5287
1N5297
1N5298
1N5305
1N5309
1N5310
1N5311
1N5312
1N5313
Gfk 81a
LT 543 common cathode
Gfp 81a
MMBZ15ALT1
MZ4623
SOT23 MOS MARKING KE
gfk 47a
mzp a 001 96 16
MMBZ20ALT1
1N5994B
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zener diode 1n5908
Abstract: 1N5908 1N6373 1N6389 5KE200A ICTE-45 MPTE-45 zener 1.5KE200A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5908 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are Motorola’s exclusive,
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1N5908
1A-02
zener diode 1n5908
1N5908
1N6373
1N6389
5KE200A
ICTE-45
MPTE-45
zener 1.5KE200A
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ICTE-5
Abstract: No abstract text available
Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have
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1N6373
1N6381
ICTE-36,
MPTE-45)
ICTE-5
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zener 1.5KE200A
Abstract: 1.5KE6.8A/CA 1N6373 1N6373A 1N6374 1N6375 1N6376 1N6377 1N6378 1N6382
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N6373A SERIES 1500 Watt MOSORB GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1500 WATT PEAK POWER Zener Transient Voltage Suppressors Unidirectional and Bidirectional Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are Motorola’s exclusive,
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1N6373A
1A-02
zener 1.5KE200A
1.5KE6.8A/CA
1N6373
1N6373A
1N6374
1N6375
1N6376
1N6377
1N6378
1N6382
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IN4753
Abstract: 129 ITT zener ln4731 1N4733 1N4705
Text: AMERICAN POWER DEVICES S3E D • ’0737135 GOQGOIM T m ÎS j/il ^ ZENER DIODES r ~ - DO-35 Case - -— -— — — 250mW - DO-35 Case Nominal Zener Voltage Maximum Reverse Current Test
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00dg014
DO-35
250mW
10/iA.
1n4683
1n4684
1n4685
1n4686
IN4753
129 ITT zener
ln4731
1N4733
1N4705
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Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE AVALANCHE ZENER DIODES LVA 400m W Pa rt# Nom inal Zene r Voltage Test Current Maximum Zener Impedence M axim um Reverse Current v z @ iCT lz (mA) Zzr@lzr(a> Tc ( V C ) 4.3 1N6082B 1N6083B 1N6084B 4.7 5.1 5.6 1N6085B 1N6086B 1N6087B 1N6088B 6.2
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1N6082B
1N6083B
1N6084B
1N6085B
1N6086B
1N6087B
1N6088B
1N6089B
1N6090B
1N6091B
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1n53338
Abstract: 1N53888 2SC 930 AF 1NS339B 1N6360B Zener diode wz 210 1N5333B 1N5334B 1N5335B 1N5336B
Text: 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac teristics that reflect the superior capabilities of silicon-oxide-passivated junctions. All this in an axlal-lead, transfer-molded plastic package offering protection In all common environ
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in5333
Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Text: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better
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D50DE
DZD900
1C3016
IN3016
IN3785
IN3821
IN5333
IN3051
IN3B20
IN3830
IN5388
DZU 41
IN5333 motorola
in538
1C5366
1C3016
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B34 ZENER DIODE
Abstract: ZY15 ZENER diode Y8 ZY18 58A2 diode zener 345 FA60R FAG 32 H 48 zener diode ZY10
Text: S7E ]> • 345^355 0GÜ07bG GSS ■ F G R S FAGOW zY2oo FA60R Dimensions in mm. ELECTRONICS DO-15 F-126 58 A 2 Plastic TH l-^ S Voltage 1 to 200 V Power 2.0 W Mounting instructions 1 Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.
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DO-15
F-126
QDD07bb
B34 ZENER DIODE
ZY15
ZENER diode Y8
ZY18
58A2
diode zener 345
FA60R
FAG 32
H 48 zener diode
ZY10
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