ZENER DIODE E2 A2 Search Results

e304 fet

Contextual Info: Il III 'Il VRE304 Low Cost •■■ Precision Reference THALER CORPORATION • 2015 N. FO RBES BO ULEVARD • TUCSO N, A2. 85745 • 520 882-4000 FEATURES • 4.500 V OUTPUT ± 0.450 mV (.01 %) PIN CONFIGURATION •TEM PER A TU R E DRIFT: 0.6 ppm/°C • LOW NOISE: 3yV „

J201 spice

Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Contextual Info: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

Dual pnp Dual npn Transistor

Abstract: n-channel JFET sot23-6 surface mount pico-amp diode dual P-Channel JFET sot23 A1 sot23 n-channel dual Channel JFET sot23 "Dual npn Transistor" LS841 SOIC J110 spice A6 SOT-23 MOSFET P-CHANNEL
Contextual Info: LS3550 SERIES MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated

Contextual Info: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1

J201 Replacement

Abstract: 2N5019 "direct replacement"
Contextual Info: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation

Current Regulator Diode

Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Contextual Info: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

Contextual Info: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted

J201 Replacement

Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
Contextual Info: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current

sot 26 Dual N-Channel MOSFET

Abstract: 10mA JFET LS358
Contextual Info: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C

jfet differential transistor

Abstract: JFET 401 U402 N CHANNEL FET
Contextual Info: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature

Contextual Info: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current

WY smd transistor

Contextual Info: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection

Contextual Info: Û2 35b05 000153b 30b • SIEM ENS PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump • Fast demagnetization of inductive loads

Contextual Info: flP3Sb05 o o a i s b 2 m a • ■ SIEMENS PROFET BTS 542 E2 Smart Highside Power Switch Features Product Summary • • • • • • • • Overvoltage protection Vbb AZ Operating voltage On-state resistance Load current (ISO) Vbb(on) /L(ISO) 18 m n

MS24178-D1

Abstract: MS35650-305 MS35649-265 AN96110 ARE 1312 RELAY MS35338-98 AN9616 MIL-PRF-6106 ms24178 ms2417
Contextual Info: 7064-4656 ENGINEERING DATA SHEET CONTACTOR 2PST-DM, 55 AMP Non-latching solenoid design power contactor MIL-PRF-6106 Qualified to MS24178-D1 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 55 Amps / 28 Vdc Weight 350g max. Dimensions of case 76.2mm x 68.2mm x 51.58mm

smd transistor jst

Abstract: st smd diode VU SMD code E2 BTS442E2 E3043 E3062 E3062A Q67060-S6206-A2 Q67060-S6206-A3 WN smd transistor
Contextual Info: SIEMENS &E35L.D5 O G ^ ß O ö tô t m PROFET BTS 442 E2 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation

C6320

Abstract: 620 tg diode
Contextual Info: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps

C6320

Contextual Info: TC6320 N- and P-Channel, Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps

MS24149-D1

Abstract: Leach Relay 9330-10374 AN508-6-5 9330-4026 Leach Relay Reliability MS35338-98 relay ms24149d1
Contextual Info: SERIES 9330 ENGINEERING DATA SHEET RELAY - NONLATCH 10 AMP, 2PDT Balanced armature relay Hermetically sealed construction Contact arrangement 2 PDT Designed to the performance standards of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at

ms24149-d1

Abstract: MS24149-A1 9330-10374 9330-4026 Relay leach Leach Relay Reliability AN508-6-5 MS35338-98
Contextual Info: 9330 ENGINEERING DATA SHEET RELAY - NONLATCH 10 AMP, 2PDT Balanced armature relay Hermetically sealed construction Contact arrangement 2 PDT Meets the standards and requirements of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, 1 Ø

MS24149-D1

Abstract: 9330-10374 9330-4026 MS24149-A1 AN508-6-5 ms24149d1 MS24149
Contextual Info: 9330 ENGINEERING DATA SHEET RELAY - NONLATCH 10 AMP, 2PDT Balanced armature relay Hermetically sealed construction Contact arrangement 2 PDT Meets the standards and requirements of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, 1 Ø

Contextual Info: • Ö E 3 S bO S D D f i m ^ b TFT S IE M E N S PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features • Load dump and reverse battery protection1 VLoad dump • Clam p of negative voltage at output V b b -V b u T Avalanche • Short-circuit protection

Contextual Info: Supertex inc. TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features ►► Integrated GATE-to-SOURCE resistor ►► Integrated GATE-to-SOURCE Zener diode ►► Low threshold ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds

MS27418-2A

Abstract: MS27418-2B 9324-8214 9324-10315 MS25036-63 MS27418-1A 9324-7424 ms27418-1b MS25036 with .080 hole MS27418-1C
Contextual Info: SERIES 9324 ENGINEERING DATA SHEET RELAY - NONLATCH 25 AMP, 3 PST/NO Hermetically sealed Contact arrangement 3 PST/NO Designed to the performance standards of MIL-PRF-6106 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac 60 Hz/400 Hz, 1 Ø