zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20
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500mW
DODO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
zener zp 278
Zener Diode minimelf
Zener diode wz 162
krc 118 056
diode 918b
zener diode 182
KD6 Z7
ZENER DIODE 18-2
diode 368b
h25b
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33A zener diode
Abstract: zener diode 46a
Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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SMA4728A
SMA4764A
1-Jul-2004
DO-214AC
33A zener diode
zener diode 46a
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Untitled
Abstract: No abstract text available
Text: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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1SMA4728A
SZ1330A
SMA/DO-214AC,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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SML4728A
SMZ1330A
OD-123FL
OD-123FL,
MIL-STD-202,
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zener diode 46a
Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
Text: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component
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SMA4728A
SMA4764A
MIL-STD-202,
SMA4758A
SMA4759A
SMA4760A
SMA4761A
SMA4762A
SMA4763A
zener diode 46a
ZENER DIODE IN 47 1W 47A
zener diode 54A
SMA4754A
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39A zener diode
Abstract: SMAJ ZENER DIODE SMAJ4730A
Text: MCC SMAJ4728A THRU SMAJ4764A omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100 Volts Low Zener Impedance
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SMAJ4728A
SMAJ4764A
DO-214AC
Tamb50)
100K/W
200mA:
39A zener diode
SMAJ ZENER DIODE
SMAJ4730A
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39A zener diode
Abstract: 51a zener 46a sma zener diode 46a SMAJ4734A SMAJ4730A
Text: MCC TM Micro Commercial Components SMAJ4728A THRU SMAJ4764A omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100 Volts
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SMAJ4728A
SMAJ4764A
DO-214AC
Tamb50)
100K/W
200mA:
39A zener diode
51a zener
46a sma
zener diode 46a
SMAJ4734A
SMAJ4730A
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zener diode 54A
Abstract: Zener Diodes 300v STW54NK30Z W54NK30Z
Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW54NK30Z
O-247
zener diode 54A
Zener Diodes 300v
STW54NK30Z
W54NK30Z
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STW54NK30Z
Abstract: No abstract text available
Text: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW54NK30Z
O-247
STW54NK30Z
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27N60C3R
Abstract: RURP3060 HGTG27N60C3R LD26 igbt 600V
Text: HGTG27N60C3R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUGGED performance capability when subjected to harsh SHORT
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HGTG27N60C3R
150oC
180ns
27N60C3R
RURP3060
HGTG27N60C3R
LD26
igbt 600V
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490-48
Abstract: HGTG27N60C3DR 27N60C3DR LD26 RURP3060 27n-60
Text: HGTG27N60C3DR S E M I C O N D U C T O R 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other
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HGTG27N60C3DR
150oC
200ns
1-800-4-HARRIS
490-48
HGTG27N60C3DR
27N60C3DR
LD26
RURP3060
27n-60
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27N60C3DR
Abstract: HGTG27N60C3DR 490-48 LD26 RURP3060
Text: HGTG27N60C3DR 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other
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HGTG27N60C3DR
150oC
200ns
27N60C3DR
HGTG27N60C3DR
490-48
LD26
RURP3060
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G30N6
Abstract: 27N60C3DR
Text: [ /Title HGT G27N6 0C3D R /Subject (54A, 600V, Rugged UFS Series NChannel IGBT with AntiParallel Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche HGTG27N60C3DR CT ODU ODUCT R P PR TE OLE UTE OBS UBSTIT 0B3D E S G30N6
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G30N6
HGTG27N60C3DR
G27N6
27N60C3DR
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27N60C3R
Abstract: TA49048 27N60C hgtg27n60
Text: [ /Title HGT G27N6 0C3R /Subject (54A, 600V, Rugged UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power HGTG27N60C3R T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT 0B3
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HGTG27N60C3R
G27N6
27N60C3R
TA49048
27N60C
hgtg27n60
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HGTG18N120BND
Abstract: 18n120bnd 12V 200A Relay LD26 TA49304
Text: HGTG18N120BND Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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HGTG18N120BND
HGTG18N120BND
18n120bnd
12V 200A Relay
LD26
TA49304
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G18N120BN
Abstract: HGTG18N120BN HGTG18N120BND LD26 transistors equivalent
Text: HGTG18N120BN Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device
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HGTG18N120BN
HGTG18N120BN
140ns
150oC
G18N120BN
HGTG18N120BND
LD26
transistors equivalent
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HGTG18N120BN
Abstract: HGTG18N120BND LD26
Text: HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device
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HGTG18N120BN
HGTG18N120BN
140ns
150oC
HGTG18N120BND
LD26
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Diode Marking ZM Motorola
Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
1SMB5913A
241Sb
C6459&
Diode Marking ZM Motorola
DIODE MOTOROLA 39A
ZENER 18-2 5t
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1NB21-1
Abstract: 1N327 1NB25A 1NB21 1NB29A 1N829-1 1NS27 1NB29
Text: Feb. 25. 1999 9:54AM No. 7992 P. lO/ll • 1N821,1N823,1N825,1NS27, AND 1NB29 AVAILABLE IN JAN, JANTX AND JANTXV 1N821 thru 1N829A • 1NB21-1,1N823*1I1N825*1,1N327*1 ANO 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV and ANO JANS “* — ~ 1N821-1 thru 1N829-1
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OCR Scan
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1N821
1N823
1N825
1NS27,
1NB29
1NB21-1
1I1N825
1N327
1N829-1
1NB25A
1NB21
1NB29A
1NS27
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Untitled
Abstract: No abstract text available
Text: S HGTG27N60C3R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, T c = 25°C This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUG
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OCR Scan
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HGTG27N60C3R
180ns
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PDF
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Untitled
Abstract: No abstract text available
Text: S HGTG27N60C3DR 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, Tc = 25°C This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other
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OCR Scan
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HGTG27N60C3DR
200ns
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PDF
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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OCR Scan
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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18n120bnd
Abstract: C5426 TG18N120BND TA49304 HGTG18N120BND
Text: HGTG18N120BND S e m iconductor October 1998 Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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OCR Scan
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HGTG18N120BND
HGTG18N120BND
TA49304.
18n120bnd
C5426
TG18N120BND
TA49304
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18n120bnd
Abstract: 333AJ 25C312 HGTG18N120BND 12v zener diode JEDEC 1N TA49304 12V 200A Relay LD26
Text: in t e HGTG18N120BND r r ii J a n u a ry . m Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best
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OCR Scan
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HGTG18N120BND
HGTG18N120BND
TA49304.
18n120bnd
333AJ
25C312
12v zener diode JEDEC 1N
TA49304
12V 200A Relay
LD26
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