ZENER DIODE 54A Search Results

zener zp 278

Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Contextual Info: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20

33A zener diode

Abstract: zener diode 46a
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

Contextual Info: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features        Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

zener diode 46a

Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
Contextual Info: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component

39A zener diode

Abstract: SMAJ ZENER DIODE SMAJ4730A
Contextual Info: MCC SMAJ4728A THRU SMAJ4764A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100
Volts Low Zener Impedance

39A zener diode

Abstract: 51a zener 46a sma zener diode 46a SMAJ4734A SMAJ4730A
Contextual Info: MCC TM Micro Commercial Components SMAJ4728A THRU SMAJ4764A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100
Volts

zener diode 54A

Abstract: Zener Diodes 300v STW54NK30Z W54NK30Z
Contextual Info: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY

1NB21-1

Abstract: 1N327 1NB25A 1NB21 1NB29A 1N829-1 1NS27 1NB29
Contextual Info: Feb. 25. 1999 9:54AM No. 7992 P. lO/ll • 1N821,1N823,1N825,1NS27, AND 1NB29 AVAILABLE IN JAN, JANTX AND JANTXV 1N821 thru 1N829A • 1NB21-1,1N823*1I1N825*1,1N327*1 ANO 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV and ANO JANS “* — ~ 1N821-1 thru 1N829-1

STW54NK30Z

Contextual Info: STW54NK30Z N-CHANNEL 300V - 0.052Ω - 54A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE BVDSS RDS on ID Pw STW54NK30Z 300 V < 0.060 Ω 54 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY

27N60C3R

Abstract: RURP3060 HGTG27N60C3R LD26 igbt 600V
Contextual Info: HGTG27N60C3R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUGGED performance capability when subjected to harsh SHORT

490-48

Abstract: HGTG27N60C3DR 27N60C3DR LD26 RURP3060 27n-60
Contextual Info: HGTG27N60C3DR S E M I C O N D U C T O R 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other

27N60C3DR

Abstract: HGTG27N60C3DR 490-48 LD26 RURP3060
Contextual Info: HGTG27N60C3DR 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other

Contextual Info: S HGTG27N60C3R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, T c = 25°C This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. This device demonstrates RUG­

27N60C3R

Abstract: TA49048 27N60C hgtg27n60
Contextual Info: [ /Title HGT G27N6 0C3R /Subject (54A, 600V, Rugged UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power HGTG27N60C3R T UCT ROD RODUC P E P T E E OL UT OBS UBSTIT 0B3

Contextual Info: S HGTG27N60C3DR 54A, 600V, Rugged UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode January 1997 Features Description • 54A, 600V, Tc = 25°C This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other

27N60C3R

Abstract: RURP3060 HGTG27N60C3R LD26 HGTG TA49048
Contextual Info: HGTG27N60C3R S E M I C O N D U C T O R 54A, 600V, Rugged UFS Series N-Channel IGBT January 1997 Features Description • 54A, 600V, TC = 25oC This IGBT was designed for optimum performance in the demanding world of motor control operation as well as other high

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

HGTG18N120BND

Abstract: 18n120bnd 12V 200A Relay LD26 TA49304
Contextual Info: HGTG18N120BND Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

G18N120BN

Abstract: HGTG18N120BN HGTG18N120BND LD26 transistors equivalent
Contextual Info: HGTG18N120BN Data Sheet January 2000 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

18n120bnd

Abstract: C5426 TG18N120BND TA49304 HGTG18N120BND
Contextual Info: HGTG18N120BND S e m iconductor October 1998 Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

18n120bnd

Abstract: 333AJ 25C312 HGTG18N120BND 12v zener diode JEDEC 1N TA49304 12V 200A Relay LD26
Contextual Info: in t e HGTG18N120BND r r ii J a n u a ry . m Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG18N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

HGTG18N120BN

Abstract: HGTG18N120BND LD26
Contextual Info: HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT Features The HGTG18N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device