SM 74hc04
Abstract: sw dip-8 16DIP300 74HC00 TANT01 74HC04 10HEADER 74HC157 74HC244 IN4148
Text: A B C D DB25 P4 GND +3.3V S3 RESET SWSPDT 500 R4 P1 P2 1 1 INT* VDD 5 8 D04 D2 5 4 2 1 + 1 1 0.1uF C13 U2B 74HC00 E2 9 10 JUMPER E1 JUMPER 6 3 U2C 74HC00 U2A 74HC00 R12 22K SM/R_0805 D04 D3 C2 10uF 4.3V ZDIODE D1 VDD3 R13 22K SM/R_0805 C1 100uF TANT01 + D04
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74HC00
100uF
TANT01
IN4148
74HC244
T3001
SM 74hc04
sw dip-8
16DIP300
74HC00
TANT01
74HC04
10HEADER
74HC157
74HC244
IN4148
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T7100
Abstract: C157 TANT01 ICT R7 HCT244 P300 XRT71D00 XRT7300 P30012 BG1A
Text: A B C D +3.3V GND +5V DB25 P8 P3 P1 P2 1 1 1 1 14 2 15 3 16 4 17 5 18 6 19 7 20 8 21 9 22 10 23 11 24 12 25 13 + 500 R11 R7 + X6 X5 X4 5 5 0.1uF C13 3.9V ZDIODE D5 0.1uF C7 0.1uF C2 0.1uF C3 VDD HOST MODE RESET SWITCH RESET SWSPDT R14 22K SMDRC VDD 5 4 2 3
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HCT244
T71D00
RT71D00
T7100
C157
TANT01
ICT R7
HCT244
P300
XRT71D00
XRT7300
P30012
BG1A
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16DIP300
Abstract: 74HC00 74HC04 dmo3 10HEADER dmo2 TANT01 74HC157 74HC244 IN4148
Text: A B C GND P1 P2 TP29 GND +3.3V RESET SWSPDT S4 1 14 2 15 3 16 4 17 5 18 6 19 7 20 8 21 9 22 10 23 11 24 12 25 13 1 1 TP1 GND + C1 100uF TANT01 TP30 GND HOST MODE RESET SWITCH 27 26 DB25 P3 PARALLEL PORT IN4148 VDD3 5 4.3V ZDIODE 8 D04 D14 + C2 10uF 6 3 U4C
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100uF
TANT01
IN4148
74HC00
T3001
XRT75L04
74HC04
16DIP300
74HC00
74HC04
dmo3
10HEADER
dmo2
TANT01
74HC157
74HC244
IN4148
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fdbs09h04
Abstract: FDBS09H04A FDPS09H04 FDBS09H04A_F085A
Text: FDBS09H04A_F085A/FDPS09H04A_F085A Smart High Side Switch Features Description • Short circuit protection with latch N channel power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart Trench chip on chip technology. Provides
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FDBS09H04A
F085A/FDPS09H04A
F085A
F085A
fdbs09h04
FDPS09H04
FDBS09H04A_F085A
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PG-TO218-5-146
Abstract: diode zd 22 BTS550P-E3146 ZD 6v8 PG-TO218-5
Text: PROFET Data Sheet BTS550 Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of
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BTS550
2010-June-01
726-BTS550PE3146
BTS550P
E3146
PG-TO218-5-146
diode zd 22
BTS550P-E3146
ZD 6v8
PG-TO218-5
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Untitled
Abstract: No abstract text available
Text: VEMI85AB-HGK www.vishay.com Vishay Semiconductors 8-Channel EMI-Filter with ESD-Protection FEATURES • Ultra compact LLP3313-17L package • Low package profile of 0.6 mm • 8-channel EMI-filter • Low leakage current • Line resistance RS = 100 • Typical cut off frequency f3dB = 130 MHz
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VEMI85AB-HGK
LLP3313-17L
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TOKO CERAMIC FILTER 455
Abstract: TDA1083 vogt l9 vogt u8 154AN CY2-22124-RT02 AM-receiver circuit vogt l6 TOKO CERAMIC FILTER vogt
Text: TDA1083 One Chip AM/FM Radio with Audio Power Amplifier Description The integrated circuit TDA1083 includes, with exception of the FM front end, a complete AM-/FM-radio-circuit with audio power amplifier. An internal Z-diode stabilizes the supply voltage at VS [ 13 V, which allows
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TDA1083
TDA1083
D-74025
TOKO CERAMIC FILTER 455
vogt l9
vogt u8
154AN
CY2-22124-RT02
AM-receiver circuit
vogt l6
TOKO CERAMIC FILTER
vogt
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Untitled
Abstract: No abstract text available
Text: Temic U4793B Se m i co n ü u c tors Overload Monitoring with Resistive Load, Vx = 44.5 mV Description The bipolar IC U4793B is designed to monitor overload or a short circuit in automotive or industrial applications. The threshold is tied to V 4 5 = Vs - V-p where
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U4793B
U4793B
D-74025
22-Apr-99
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BB205
Abstract: No abstract text available
Text: VISHAY Vishay Telefunken Voltage Regulator Diodes and Z-diodes A voltage regulator diode is a diode which develops an essentially constant voltage across its terminals throughout a specified current range. Special reverse-biased diodes known as Z-diodes and
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BA479G
BA679.
BB205
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Untitled
Abstract: No abstract text available
Text: BZM55C. v is h a y Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Saving space • Hermetic sealed parts • • Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55C./TZMC. Very sharp reverse characteristic
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BZM55C.
BZT55C.
300K/W
e970-5600
01-Apr-99
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U4311B-C
Abstract: rc car receiver remote control rc car circuit diagram
Text: T e m ic U4311B Se m i co n ü u c tors Low-Current Superhet Remote Control Receiver Description The U 431IB is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car
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U4311B
431IB
D-74025
19-Nov-98
U4311B-C
rc car receiver
remote control rc car circuit diagram
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Untitled
Abstract: No abstract text available
Text: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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50mmx50mmx
200mA
24-Jun-96
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ic 4072
Abstract: ic 4072 pin diagram 8 PIN 4072 4072B 4072bt R 937 4072
Text: Tem ic U 4072 B TELEFUNKEN Semiconductors T\vo-Tone Ringer for Telephone Sets Description The two-tone ringing circuit in conjunction with a piezo transducer replaces the norm al electrom echanical telephone bell. It is operated with the ringing current from the exchange. However, there
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D-74025
ic 4072
ic 4072 pin diagram
8 PIN 4072
4072B
4072bt
R 937
4072
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1240 ringer
Abstract: No abstract text available
Text: Temic U3760MB Semiconductors Low-Voltage Standard Telephone Circuit Description TEMIC’s low-voltage telephone circuit, U3760MB, performs all the speech and line interface functions required in an electronic telephone set tone ringer, pulse and DTMF dialing with redial.
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U3760MB
U3760MB,
D-74025
19-Feb-98
1240 ringer
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Ip200mA
Abstract: 600L100
Text: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1
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--300K/W
50mmx50mmxl
24-Jun-96
Ip200mA
600L100
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Untitled
Abstract: No abstract text available
Text: TeMIC BZW03C. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits
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BZW03C.
100ns,
12-Dec-94
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4728a
Abstract: 4747a IN 4732A N4742A 4738a 4734A 4735A 4742A 1N47 4733A
Text: Tem ic 1N4728A.1N4761 A TELEFUN KEN Sem iconductors Silicon Power Z-Diodes Features • Very sharp reverse characteristic • Very high stab ility • L o w reverse current lev el • V /-to le r a n c e ± 5% Applications 44 V oltage stab ilization Absolute Maximum Ratings
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1N4728A.
1N4761
1N4761A
4728a
4747a
IN 4732A
N4742A
4738a
4734A
4735A
4742A
1N47
4733A
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Untitled
Abstract: No abstract text available
Text: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%
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50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s List of Symbols A Anode Irrm a Distance in mm I rsm Repetitive peak reverse current Non-repetitive peak reverse current Irw m bpn Normalized power factor Crest working reverse current C Capacitance, general Is Supply current
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Untitled
Abstract: No abstract text available
Text: Tem ic TZMC. S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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300K/W
D-74025
24-Jun-96
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Untitled
Abstract: No abstract text available
Text: TEMIC BZW03D. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • G lass passivated junction • H erm etically sealed package • C lam ping sealed package Applications Voltage regulators and transient suppression circuits
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BZW03D.
500ns
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: Tem ic TZM5221B.TZM5267B S e m i c o n d u c t o r s Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221B.1N5267B • Low reverse current level • V /-tolerance ± 5% with the devices
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TZM5221B.
TZM5267B
1N5221B.
1N5267B
D-74025
12-Dec-94
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Untitled
Abstract: No abstract text available
Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings
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TZS4678.
TZS4717
300K/W
50mmx50mmx1
100mA
Number85613
-Apr-99
01-Apr-99
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FZIT
Abstract: No abstract text available
Text: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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TZQ5221
TZQ5267B
--300K/W
50mmx50mmx1
01-Apr-99
FZIT
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